DEVICES AND METHODS OF REDUCING DAMAGE DURING BEOL M1 INTEGRATION

Intermediate semiconductor devices and methods of reducing damage during back end of the line (BEOL) metallization and metal one (M1) layer integration scheme are provided. One method includes, for instance: obtaining a wafer having at least one contact region; depositing on the wafer a thin film st...

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Bibliographic Details
Main Authors KM MAHALINGAM Anbu Selvam, CHILD, JR. Craig Michael, CHANDRASHEKAR Ashwini
Format Patent
LanguageEnglish
Published 24.08.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Intermediate semiconductor devices and methods of reducing damage during back end of the line (BEOL) metallization and metal one (M1) layer integration scheme are provided. One method includes, for instance: obtaining a wafer having at least one contact region; depositing on the wafer a thin film stack having at least one layer of amorphous silicon (a-Si); performing lithography to pattern at least one opening; performing lithography to pattern at least one via opening and at least one trench opening; and removing the at least one a-Si layer. One intermediate semiconductor device includes, for instance: a wafer having at least one contact region; at least one first dielectric layer on the device; at least one second dielectric layer on the at least one first dielectric layer; and at least one a-Si layer on the at least one second dielectric layer.
Bibliography:Application Number: US201615048493