METHOD FOR PARAMETER EXTRACTION OF A SEMICONDUCTOR DEVICE

A method is provided for parameter extraction of a semiconductor device with a multi-finger gate. The method includes measuring gate-to-source and gate-to-drain capacitances and performing 3D simulation to compute fringing capacitances, thereby computing an overlap capacitance between the gate and a...

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Bibliographic Details
Main Authors LIN Yen-Ying, GUO Jyh-Chyurn
Format Patent
LanguageEnglish
Published 24.08.2017
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A method is provided for parameter extraction of a semiconductor device with a multi-finger gate. The method includes measuring gate-to-source and gate-to-drain capacitances and performing 3D simulation to compute fringing capacitances, thereby computing an overlap capacitance between the gate and a source/drain extension region, and computing a length of the source/drain extension region according to the overlap capacitance.
Bibliography:Application Number: US201615351626