SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

According to one embodiment, a semiconductor memory device includes, a first interconnect layer provided on a first insulating layer and including a first conductive layer, a second interconnect layer provided on a second insulating layer above the first interconnect layer and including a second con...

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Bibliographic Details
Main Author KOMORI Yosuke
Format Patent
LanguageEnglish
Published 17.08.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, a semiconductor memory device includes, a first interconnect layer provided on a first insulating layer and including a first conductive layer, a second interconnect layer provided on a second insulating layer above the first interconnect layer and including a second conductive layer having a composition different from that of the first conductive layer, and a pillar extending through the first and second insulating layers and the first and second interconnect layers and including a semiconductor layer, and a third insulating layer, a charge storage layer, and a fourth insulating layer, which are stacked on a side surface of the semiconductor layer.
Bibliography:Application Number: US201715433451