SURFACE PHOTOVOLTAGE CALIBRATION STANDARD

A method of preparing an iron-implanted semiconductor wafer for use in surface photovoltage iron mapping and other evaluation techniques. A semiconductor wafer is implanted with iron through the at least two different regions of the front surface of the semiconductor at different iron implantation d...

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Bibliographic Details
Main Authors Taylor Patrick Alan, Crepin Robert James, Rapoport Igor
Format Patent
LanguageEnglish
Published 17.08.2017
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Summary:A method of preparing an iron-implanted semiconductor wafer for use in surface photovoltage iron mapping and other evaluation techniques. A semiconductor wafer is implanted with iron through the at least two different regions of the front surface of the semiconductor at different iron implantation densities, and the iron-implanted semiconductor wafer is annealed at a temperature and duration sufficient to diffuse implanted iron into the bulk region of the semiconductor wafer.
Bibliography:Application Number: US201515514545