MANUFACTURING METHOD OF METAL GATE STRUCTURE

• Main Authors: Hsu Chi-Mao, Chen Chien-Hao, Ho Nien-Ting, Chen Wei-Yu, Huang Hsin-Fu, Sun Chi-Yuan, Cheng Tsun-Min, Tsai Min-Chuan
• Format: Patent
• Language: English
• Published: 20.07.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function la...