MANUFACTURING METHOD OF METAL GATE STRUCTURE

A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function la...

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Main Authors Hsu Chi-Mao, Chen Chien-Hao, Ho Nien-Ting, Chen Wei-Yu, Huang Hsin-Fu, Sun Chi-Yuan, Cheng Tsun-Min, Tsai Min-Chuan
Format Patent
LanguageEnglish
Published 20.07.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. The silicon-containing work function layer includes a vertical portion and a horizontal portion. Finally, the gate trench is filled up with a conductive metal layer.
Bibliography:Application Number: US201715479292