MANUFACTURING METHOD OF METAL GATE STRUCTURE
A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function la...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English |
Published |
20.07.2017
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Subjects | |
Online Access | Get full text |
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Abstract | A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. The silicon-containing work function layer includes a vertical portion and a horizontal portion. Finally, the gate trench is filled up with a conductive metal layer. |
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AbstractList | A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. The silicon-containing work function layer includes a vertical portion and a horizontal portion. Finally, the gate trench is filled up with a conductive metal layer. |
Author | Ho Nien-Ting Cheng Tsun-Min Sun Chi-Yuan Chen Chien-Hao Huang Hsin-Fu Chen Wei-Yu Tsai Min-Chuan Hsu Chi-Mao |
Author_xml | – fullname: Hsu Chi-Mao – fullname: Chen Chien-Hao – fullname: Ho Nien-Ting – fullname: Chen Wei-Yu – fullname: Huang Hsin-Fu – fullname: Sun Chi-Yuan – fullname: Cheng Tsun-Min – fullname: Tsai Min-Chuan |
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Snippet | A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | MANUFACTURING METHOD OF METAL GATE STRUCTURE |
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