MANUFACTURING METHOD OF METAL GATE STRUCTURE

A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function la...

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Main Authors Hsu Chi-Mao, Chen Chien-Hao, Ho Nien-Ting, Chen Wei-Yu, Huang Hsin-Fu, Sun Chi-Yuan, Cheng Tsun-Min, Tsai Min-Chuan
Format Patent
LanguageEnglish
Published 20.07.2017
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Abstract A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. The silicon-containing work function layer includes a vertical portion and a horizontal portion. Finally, the gate trench is filled up with a conductive metal layer.
AbstractList A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. The silicon-containing work function layer includes a vertical portion and a horizontal portion. Finally, the gate trench is filled up with a conductive metal layer.
Author Ho Nien-Ting
Cheng Tsun-Min
Sun Chi-Yuan
Chen Chien-Hao
Huang Hsin-Fu
Chen Wei-Yu
Tsai Min-Chuan
Hsu Chi-Mao
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– fullname: Cheng Tsun-Min
– fullname: Tsai Min-Chuan
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Snippet A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate...
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SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title MANUFACTURING METHOD OF METAL GATE STRUCTURE
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