SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING

• Main Authors: CAO Huy M, BATES Kenneth A, PAL Shyam, BOUCHE Guillaume, HUANG Haigou, LIU Huang, DAI Xintuo, KRISHNAN Bharat, WEI Andy, LIM SangWoo, SHENG Haifeng, LIU Jinping, HAN Ja-Hyung, OZZELLO Anthony, MAENG Chang Ho
• Format: Patent
• Language: English
• Published: 13.07.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Methods of MOL S/D contact patterning of RMG devices without gouging of the Rx area or replacement of the dielectric are provided. Embodiments include forming a SOG layer around a RMG structure, the RMG structure having a contact etch stop layer and a gate cap layer; forming a lithography stack over the SOG and gate cap layers; patterning first and second TS openings through the lithography stack down to the SOG layer; removing a portion of the SOG layer through the first and second TS openings, the removing selective to the contact etch stop layer; converting the SOG layer to a SiO2 layer; forming a metal layer over the SiO2 layer; and planarizing the metal and SiO2 layers down to the gate cap layer.