NON-VOLATILE MEMORY AND METHOD OF MANUFACTURING THE SAME

A semiconductor device is provided. The semiconductor device comprises a first active region, a second active region and a third active region, a first poly region, a second poly region, a third poly region, a first doped region and a second doped region. The first active region, the second active r...

Full description

Saved in:
Bibliographic Details
Main Authors TSUI FELIX YING-KIT, CHEN SHIH-HSIEN, KO CHUN-YAO, LU HAU-YAN
Format Patent
LanguageEnglish
Published 06.07.2017
Subjects
ELECTRICITY
Online AccessGet full text

Cover

Abstract A semiconductor device is provided. The semiconductor device comprises a first active region, a second active region and a third active region, a first poly region, a second poly region, a third poly region, a first doped region and a second doped region. The first active region, the second active region and the third active region are separated and parallel with each other. The first poly region is arranged over the first and second active regions. The second poly region is arranged over the first and second active regions. The third poly region is arranged over the second and third active regions. The first doped region is in the second active region and between the first poly region and the second poly region. The second doped region is in the second active region and between the second poly region and the third poly region.
AbstractList A semiconductor device is provided. The semiconductor device comprises a first active region, a second active region and a third active region, a first poly region, a second poly region, a third poly region, a first doped region and a second doped region. The first active region, the second active region and the third active region are separated and parallel with each other. The first poly region is arranged over the first and second active regions. The second poly region is arranged over the first and second active regions. The third poly region is arranged over the second and third active regions. The first doped region is in the second active region and between the first poly region and the second poly region. The second doped region is in the second active region and between the second poly region and the third poly region.
Author KO CHUN-YAO
CHEN SHIH-HSIEN
LU HAU-YAN
TSUI FELIX YING-KIT
Author_xml – fullname: TSUI FELIX YING-KIT
– fullname: CHEN SHIH-HSIEN
– fullname: KO CHUN-YAO
– fullname: LU HAU-YAN
BookMark eNrjYmDJy89L5WSw8PP30w3z93EM8fRxVfB19fUPilRw9HMBMkM8_F0U_N0UfB39Qt0cnUNCgzz93BVCPFwVgh19XXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJGBobmhpYmxiZGjoTFxqgAHISsI
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2017194342A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2017194342A13
IEDL.DBID EVB
IngestDate Fri Aug 23 06:59:16 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2017194342A13
Notes Application Number: US201614987452
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170706&DB=EPODOC&CC=US&NR=2017194342A1
ParticipantIDs epo_espacenet_US2017194342A1
PublicationCentury 2000
PublicationDate 20170706
PublicationDateYYYYMMDD 2017-07-06
PublicationDate_xml – month: 07
  year: 2017
  text: 20170706
  day: 06
PublicationDecade 2010
PublicationYear 2017
RelatedCompanies TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
RelatedCompanies_xml – name: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD
Score 3.098456
Snippet A semiconductor device is provided. The semiconductor device comprises a first active region, a second active region and a third active region, a first poly...
SourceID epo
SourceType Open Access Repository
SubjectTerms ELECTRICITY
Title NON-VOLATILE MEMORY AND METHOD OF MANUFACTURING THE SAME
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170706&DB=EPODOC&locale=&CC=US&NR=2017194342A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1RS8MwED7GFPVNp-J0SkDpW3Ht2rR7GNK1KVXWdqztmE8jXTMQpBuu4t_3Gjbd096SHByXkLvLJd9dAJ6oXfSEhtaP64ZQDSGEaueGoXatpaELu-DWUqItIhpkxtvMnDXgc5cLI-uE_sjiiKhRC9T3Strr9f8lliexlZvn_AOHVi9-OvCUbXSsWbiDqeINB2wce7GruO4gS5RoImlaXQtNdzBWOsKDtFXrA5sO67yU9b5T8c_heIz8yuoCGqJswam7-3utBSfh9skbm1vt21yCHaHdm8YjJ30dMRKyMJ68EyfysJkGsUdin4ROlPmOm2Y1yIGkASOJE7IrePRZ6gYqijD_m_E8S_bl7V1Ds1yV4gYINXPKTTRSHF3vQud2n1tC73OTFstukdM2dA5xuj1MvoOzuivRqLQDzerrW9yjz63yB7lUv8tlfz0
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED-GivNNp-LH1IDSt-LWtWn3MKRrUzrtx9jSMZ9Gu2YgSDdcxX_fa9h0T3s7cnBcQn53ueTuAvBErbwj2mj9Uk0Xqi6EUK1M19WWudA1YeWpuZDZFhH1E_11akxr8LmthZF9Qn9kc0RE1BzxXkp7vfq_xHJlbuX6OfvAoeWLx3uusomO2ybuYKq4_R4bxm7sKI7TS8ZKNJK8dtULTbMxVjrEQ7ZZ4YFN-lVdymrXqXincDREeUV5BjVRNKDubP9ea8BxuHnyRnKDvvU5WBHavUkc2HwQMBKyMB69EztykeR-7JLYI6EdJZ7t8KRKciDcZ2Rsh-wCHj3GHV9FFWZ_M54l4119O5dwUCwLcQWEGhlNDTRSKbreuZZa3dQUWjc1aL5o5Rm9huY-STf72Q9Q93kYzIJB9HYLJxVLZqbSJhyUX9_iDv1vmd3LZfsF7liCMA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=NON-VOLATILE+MEMORY+AND+METHOD+OF+MANUFACTURING+THE+SAME&rft.inventor=TSUI+FELIX+YING-KIT&rft.inventor=CHEN+SHIH-HSIEN&rft.inventor=KO+CHUN-YAO&rft.inventor=LU+HAU-YAN&rft.date=2017-07-06&rft.externalDBID=A1&rft.externalDocID=US2017194342A1