NON-VOLATILE MEMORY AND METHOD OF MANUFACTURING THE SAME

A semiconductor device is provided. The semiconductor device comprises a first active region, a second active region and a third active region, a first poly region, a second poly region, a third poly region, a first doped region and a second doped region. The first active region, the second active r...

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Bibliographic Details
Main Authors TSUI FELIX YING-KIT, CHEN SHIH-HSIEN, KO CHUN-YAO, LU HAU-YAN
Format Patent
LanguageEnglish
Published 06.07.2017
Subjects
ELECTRICITY
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Summary:A semiconductor device is provided. The semiconductor device comprises a first active region, a second active region and a third active region, a first poly region, a second poly region, a third poly region, a first doped region and a second doped region. The first active region, the second active region and the third active region are separated and parallel with each other. The first poly region is arranged over the first and second active regions. The second poly region is arranged over the first and second active regions. The third poly region is arranged over the second and third active regions. The first doped region is in the second active region and between the first poly region and the second poly region. The second doped region is in the second active region and between the second poly region and the third poly region.
Bibliography:Application Number: US201614987452