SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface to...

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Main Authors LU JIECH-FUN, WEN CHI-YUAN, HSUEH CHE-HSIANG, WU MINGI, YEH YU-LUNG, WU JIAN, FANG CHUNIEH, SU CHINGUNG
Format Patent
LanguageEnglish
Published 06.07.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.
Bibliography:Application Number: US201615088126