CRUCIBLE FOR GROWING CRYSTALS

Crucible for growing single crystals, formed from W, Mo, Re, an alloy or a base alloy of these metals, and a process for producing a crucible (2), wherein at least part of an outwardly facing outer face (4) of the crucible (2) has, at least in certain regions, a profile with a mean profile depth (a)...

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Bibliographic Details
Main Authors HOCHSTRASSER Mathias, EBERLE Wolfgang, HAMMERLE Walter, WEBHOFER Martin, LARCHER Heike, CHENG David, KLEINPASS Bernd
Format Patent
LanguageEnglish
Published 06.07.2017
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:Crucible for growing single crystals, formed from W, Mo, Re, an alloy or a base alloy of these metals, and a process for producing a crucible (2), wherein at least part of an outwardly facing outer face (4) of the crucible (2) has, at least in certain regions, a profile with a mean profile depth (a) of between 5 and 500 μm.
Bibliography:Application Number: US201515323246