Reactor For Producing Polycrystalline Silicon and Method For Removing A Silicon-Containing Layer On A Component Of Such A Reactor

• Main Author: WECKESSER Dirk
• Format: Patent
• Language: English
• Published: 08.06.2017
• Subjects: ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; GRINDING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; POLISHING; SEPARATION; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

Silicon deposited by CVD and/or silico dust is removed from a polycrystalline silicon deposition reactor component by abrasion with silicon-containing particles in a gas stream.