SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

• Main Authors: FUJITA Tetsuo, HARA Yoshihito, NAKATA Yukinobu
• Format: Patent
• Language: English
• Published: 25.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

This semiconductor device (100) includes: a thin-film transistor (101); an interlevel insulating layer (14) including a first insulating layer (12); a first transparent conductive layer (15) formed on the interlevel insulating layer and having a first hole (15p); a dielectric layer (17) covering the side surface of the first transparent conductive layer closer to the first hole; and a second transparent conductive layer (19a) overlapping at least partially with the first transparent conductive layer via the dielectric layer, which has a second hole (17p). The first insulating layer has a third hole (12p). The interlevel insulating layer and dielectric layer have a first contact hole (CH1), the sidewall of which includes the side surfaces of the second and third holes (17p, 12p). At least a part of the side surface of the third hole is aligned with that of the second hole. The second transparent conductive layer contacts with the drain electrode in the first contact hole to form a contact portion (105), which at least partially overlaps with a gate line layer when viewed along a normal to a substrate.