METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device which includes a first member and a second member joined to the first member includes: a) producing (Cu,Ni)6Sn5 on a Ni film formed on the first member by melting a first Sn-Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the first mem...

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Bibliographic Details
Main Authors KADOGUCHI Takuya, TAKE Naoya
Format Patent
LanguageEnglish
Published 18.05.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device which includes a first member and a second member joined to the first member includes: a) producing (Cu,Ni)6Sn5 on a Ni film formed on the first member by melting a first Sn-Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the first member; b) producing (Cu,Ni)6Sn5 on a Ni film formed on the second member by melting a second Sn-Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the second member; and c) joining the first member and the second member to each other by melting the first Sn-Cu solder having undergone step a) and the second Sn-Cu solder having undergone step b) so that the first Sn-Cu solder and the second Sn-Cu solder become integrated.
Bibliography:Application Number: US201615341379