Direct Growth Of Optoelectronic Devices On CMOS Technology

With an increasing demand for miniature low power sensors, there is a need to integrate optoelectronic devices with CMOS technology. Deposition of GaAs nanowires on polycrystalline conductive films allows for direct integration of optoelectronic devices on dissimilar materials. Nanowire growth is de...

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Bibliographic Details
Main Authors DEJARLD Matthew T, MIRECKI-MILLUNCHICK Joanna, PHILLIPS Jamie, TERAN Alan S
Format Patent
LanguageEnglish
Published 11.05.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:With an increasing demand for miniature low power sensors, there is a need to integrate optoelectronic devices with CMOS technology. Deposition of GaAs nanowires on polycrystalline conductive films allows for direct integration of optoelectronic devices on dissimilar materials. Nanowire growth is demonstrated on oxide and metallic films. Introducing dopant elements modifies the surface energy improving nanowire morphology and lowing for core-shell growth. Electrical measurements confirm that the metal-semiconductor junction is Ohmic and thus the feasibility of integrating nanowire-based devices directly on CMOS devices.
Bibliography:Application Number: US201615349059