METHOD OF TREATING A LAYER

The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target...

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Bibliographic Details
Main Authors PARK Byoung Jae, PARK Kijong, KO Yongsun, MUN ChangSup, KIM Kyunghyun, Kim Kwangsu
Format Patent
LanguageEnglish
Published 04.05.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.
Bibliography:Application Number: US201615242190