GAP FILL SELF PLANARIZATION ON POST EPI

• Main Authors: Chen Po-Chang, Leu Po-Hsiung, Liu Ding-I
• Format: Patent
• Language: English
• Published: 23.03.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to an integrated chip having gate electrodes separated from an epitaxial source/drain region by gaps filled with a flowable dielectric material. In some embodiments, the integrated chip has an epitaxial source/drain region protruding outward from a substrate. A first g...