SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND PATTERNING METHOD

A method of fabricating a semiconductor device includes forming first and second active patterns on first and second regions, respectively, of a substrate, forming first and second gate structures on the first and second active patterns, respectively, forming a coating layer to cover the first and s...

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Main Authors KIM DOHYOUNG, HAN DONGWOO, JUNG HAEGEON, YANG KWANG-YONG, JEON KYUNGYUB, LEE JINWOOK
Format Patent
LanguageEnglish
Published 23.03.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor device includes forming first and second active patterns on first and second regions, respectively, of a substrate, forming first and second gate structures on the first and second active patterns, respectively, forming a coating layer to cover the first and second gate structures and the first and second active patterns, and forming a first recess region in the first active pattern between the first gate structures and a second recess region in the second active pattern between the second gate structures.
Bibliography:Application Number: US201615260952