SEMICONDUCTOR DEVICE MANUFACTURING METHOD

A semiconductor device manufacturing method according to an embodiment including partially forming a first groove on a nitride semiconductor layer provided on a first plane of a substrate having first and second planes by etching so that the substrate is exposed, forming a second groove on the subst...

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Bibliographic Details
Main Author Masuko Shingo
Format Patent
LanguageEnglish
Published 09.03.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device manufacturing method according to an embodiment including partially forming a first groove on a nitride semiconductor layer provided on a first plane of a substrate having first and second planes by etching so that the substrate is exposed, forming a second groove on the substrate exposed inside the first groove so that a portion of the substrate remains, removing the substrate from the second plane side so that the second groove is not exposed, thinning the substrate, forming a metal film on the second plane side of the substrate, removing the metal film in a portion where the second groove is formed, and forming a third groove on the substrate in the portion where the second groove is formed so that the second groove is exposed from the second plane side.
Bibliography:Application Number: US201615067396