RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH RESISTANCE-BASED STORAGE ELEMENT AND METHOD OF FABRICATING SAME

A method of fabrication of a device includes forming a first electrode and a second electrode. The method further includes forming a resistive material between the first electrode and the second electrode to form a resistance-based storage element of a resistive random access memory (RRAM) device.

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Bibliographic Details
Main Authors Lu Yu, LI Xia, KANG Seung Hyuk
Format Patent
LanguageEnglish
Published 02.03.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabrication of a device includes forming a first electrode and a second electrode. The method further includes forming a resistive material between the first electrode and the second electrode to form a resistance-based storage element of a resistive random access memory (RRAM) device.
Bibliography:Application Number: US201514835314