SEMICONDUCTOR DEVICES HAVING FIN FIELD EFFECT TRANSISTORS WITH A SINGLE LINER PATTERN IN A FIRST REGION AND A DUAL LINER PATTERN IN A SECOND REGION AND METHODS FOR MANUFACTURING THE SAME

• Main Authors: CHA JI-HOON, KIM BOMSOO, SEO KANG-ILL
• Format: Patent
• Language: English
• Published: 23.02.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for manufacturing a semiconductor device includes forming a first active pattern in a first region of a substrate and a second active pattern in a second region of the substrate, wherein the first and second active patterns project from the substrate, forming a second liner pattern on the substrate and the second active pattern in the second region, wherein the second liner pattern has a second polarity, forming a first liner pattern on the substrate and the first active pattern in the first region, wherein the first liner pattern has a first polarity different from the second polarity, forming an isolation pattern on the first liner pattern in the first region and the second liner pattern in the second region, and exposing the first active pattern and the second active pattern by recessing the isolation pattern.