METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE

A semiconductor structure is provided. The semiconductor structure includes a substrate; and a plurality of parallel first conductive layers formed on the substrate. The semiconductor structure also includes a composite magnetic structure having a plurality of magnetic layers and a plurality of insu...

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Bibliographic Details
Main Authors PU XIANYONG, HONG ZHONGSHAN
Format Patent
LanguageEnglish
Published 16.02.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
TRANSFORMERS
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Summary:A semiconductor structure is provided. The semiconductor structure includes a substrate; and a plurality of parallel first conductive layers formed on the substrate. The semiconductor structure also includes a composite magnetic structure having a plurality of magnetic layers and a plurality of insulation layers with a sandwich arrangement formed on a portion of the substrate and portions of surfaces of the plurality of first conductive layers. Further, the semiconductor structure includes a plurality of first conductive vias and a plurality of second conductive vias formed on the first conductive layers at both sides of the composite magnetic structure. Further, the semiconductor structure also includes a plurality of second conductive layers formed on a top surface of the composite magnetic structure, top surfaces of the first conductive vias, and top surfaces of the second conductive vias to form at least one coil structure wrapping around the composite magnetic structure.
Bibliography:Application Number: US201615339403