Contact Plug Constrained By Dielectric Portions

A NAND flash memory includes active areas separated by STI structures in a substrate with a layer of a first dielectric over the substrate. Portions of a second dielectric extend over the STI structures and another layer of the first dielectric extends over both the layer and portions, with contact...

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Bibliographic Details
Main Authors Koseki Hidehito, Nakamoto Hidetoshi, Takahashi Yuji, Kumamoto Keita, Futase Takuya, Akimoto Shunsuke, Kakegawa Tomoyasu
Format Patent
LanguageEnglish
Published 09.02.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A NAND flash memory includes active areas separated by STI structures in a substrate with a layer of a first dielectric over the substrate. Portions of a second dielectric extend over the STI structures and another layer of the first dielectric extends over both the layer and portions, with contact holes extending through the dielectric layers at locations over the active areas in the semiconductor substrate.
Bibliography:Application Number: US201514817093