W-NI SPUTTERING TARGET
A sputtering target contains 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% intermetallic phases. A process for producing a W-Ni sputtering target and a process of using the sputtering target are also provi...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
02.02.2017
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Subjects | |
Online Access | Get full text |
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Summary: | A sputtering target contains 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% intermetallic phases. A process for producing a W-Ni sputtering target and a process of using the sputtering target are also provided. |
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Bibliography: | Application Number: US201415106393 |