W-NI SPUTTERING TARGET

A sputtering target contains 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% intermetallic phases. A process for producing a W-Ni sputtering target and a process of using the sputtering target are also provi...

Full description

Saved in:
Bibliographic Details
Main Authors LINKE CHRISTIAN, SCHERER THOMAS
Format Patent
LanguageEnglish
Published 02.02.2017
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A sputtering target contains 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% intermetallic phases. A process for producing a W-Ni sputtering target and a process of using the sputtering target are also provided.
Bibliography:Application Number: US201415106393