METHODS FOR PREPARING LAYERED SEMICONDUCTOR STRUCTURES

Methods for preparing layered semiconductor structures are disclosed. The methods may involve pretreating an ion-implanted donor wafer by annealing the ion-implanted donor wafer to cause a portion of the ions to out-diffuse prior to wafer bonding. The donor structure may be bonded to a handle struct...

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Bibliographic Details
Main Authors Libbert Jeffrey Louis, Ries Michael J, Lottes Charles R
Format Patent
LanguageEnglish
Published 26.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods for preparing layered semiconductor structures are disclosed. The methods may involve pretreating an ion-implanted donor wafer by annealing the ion-implanted donor wafer to cause a portion of the ions to out-diffuse prior to wafer bonding. The donor structure may be bonded to a handle structure and cleaved without re-implanting ions into the donor structure.
Bibliography:Application Number: US201515119304