SEMICONDUCTOR DEVICE HAVING A FIN

Provided is a semiconductor device. The semiconductor device includes a fin disposed on a substrate along a first direction. A sacrificial layer is disposed on the fin. An active layer is disposed on the sacrificial layer. A gate insulating layer and a gate electrode are disposed along a second dire...

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Bibliographic Details
Main Authors SUK SUNG-DAE, SEO KANG-ILL
Format Patent
LanguageEnglish
Published 19.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device. The semiconductor device includes a fin disposed on a substrate along a first direction. A sacrificial layer is disposed on the fin. An active layer is disposed on the sacrificial layer. A gate insulating layer and a gate electrode are disposed along a second direction intersecting the first direction. The gate insulating layer covers substantially entire top, side and bottom surfaces of the active layer. A source or drain region is disposed on at least one side of the gate electrode on the substrate. A first concentration of germanium in a first region and a second region of the active layer is higher than a second concentration of germanium in a third region disposed between the first region and the second region.
Bibliography:Application Number: US201615196209