THROUGH-BODY VIA LINER DEPOSITION

Techniques are disclosed for through-body via liner structures and processes of forming such liner structures in an integrated circuit. In an embodiment, an integrated circuit includes a silicon semiconductor substrate having one or more through-silicon vias (TSVs), although other through-body vias...

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Bibliographic Details
Main Authors KANG JIHO, PURI PUNEESH, JEONG JAMES Y
Format Patent
LanguageEnglish
Published 19.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Techniques are disclosed for through-body via liner structures and processes of forming such liner structures in an integrated circuit. In an embodiment, an integrated circuit includes a silicon semiconductor substrate having one or more through-silicon vias (TSVs), although other through-body vias can be used as will be appreciated in light of this disclosure. Each TSV extends through at least a portion of the substrate, for example, from one side (e.g., top) of the substrate to the opposite side of the substrate (e.g., bottom), or from one internal layer of the substrate to another internal layer. A liner is disposed between the substrate and each TSV. The liner is formed of multiple alternating layers of dissimilar insulation films (e.g., tensile films and compressive films) sandwiched together.
Bibliography:Application Number: US201415124820