MULTI-GATE DEVICE AND METHOD OF FABRICATION THEREOF

A method of semiconductor device fabrication is described that includes forming a fin extending from a substrate and having a source/drain region and a channel region. The fin includes a first epitaxial layer having a first composition and a second epitaxial layer on the first epitaxial layer, the s...

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Bibliographic Details
Main Authors Lien Wai-Yi, Leung Ying-Keung, Diaz Carlos H, Wang Chih-Hao, Ching Kuo-Cheng, Tsai Ching-Wei
Format Patent
LanguageEnglish
Published 05.01.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of semiconductor device fabrication is described that includes forming a fin extending from a substrate and having a source/drain region and a channel region. The fin includes a first epitaxial layer having a first composition and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second composition. The second epitaxial layer is removed from the source/drain region of the fin to form a gap. The gap is filled with a dielectric material. Another epitaxial material is formed on at least two surfaces of the first epitaxial layer to form a source/drain feature.
Bibliography:Application Number: US201514788161