ORGANIC THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR RECOVERYING INSULATION THEREOF

Provided are an organic thin film transistor, a method for manufacturing the same, and a method for recovering insulation thereof. Specifically, the organic thin film transistor includes a substrate, a gate electrode, a semiconductor pattern, a source electrode, a drain electrode and a gate insulati...

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Bibliographic Details
Main Authors YOON Myung-Han, CHAR Kookheon, KIM Eui tae, LEE Jae-Hyuk
Format Patent
LanguageEnglish
Published 22.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided are an organic thin film transistor, a method for manufacturing the same, and a method for recovering insulation thereof. Specifically, the organic thin film transistor includes a substrate, a gate electrode, a semiconductor pattern, a source electrode, a drain electrode and a gate insulation layer. The gate electrode is disposed on the substrate. The semiconductor pattern is electrically insulated with the gate electrode on the substrate. The source electrode and the drain electrode are each electrically connected to the semiconductor pattern on the substrate, and are separated from each other. The gate insulation layer is disposed between the semiconductor pattern and the gate electrode. The gate insulation layer is a sulfur copolymer thin film.
Bibliography:Application Number: US201615184571