TRENCH GATE POWER SEMICONDUCTOR FIELD EFFECT TRANSISTOR

• Main Authors: SIN Johnny Kin On, ZHOU Xianda, FUNG Shuk-Wa
• Format: Patent
• Language: English
• Published: 22.12.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided in the present invention is a trench gate power MOSFET (TMOS/UMOS) structure with a heavily doped polysilicon source region. The polysilicon source region is formed by deposition, and a trench-shaped contact hole is used at the source region, in order to attain low contact resistance and sm...