TRENCH GATE POWER SEMICONDUCTOR FIELD EFFECT TRANSISTOR

Provided in the present invention is a trench gate power MOSFET (TMOS/UMOS) structure with a heavily doped polysilicon source region. The polysilicon source region is formed by deposition, and a trench-shaped contact hole is used at the source region, in order to attain low contact resistance and sm...

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Bibliographic Details
Main Authors SIN Johnny Kin On, ZHOU Xianda, FUNG Shuk-Wa
Format Patent
LanguageEnglish
Published 22.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided in the present invention is a trench gate power MOSFET (TMOS/UMOS) structure with a heavily doped polysilicon source region. The polysilicon source region is formed by deposition, and a trench-shaped contact hole is used at the source region, in order to attain low contact resistance and small cell pitch. The present invention may also be implemented in an IGBT.
Bibliography:Application Number: US201414771089