SEMICONDUCTOR LIGHT EMITTING DEVICE

• Main Authors: LEE Shi Young, YEO In Joon, CHOI Byung Chul, LEE Gong Shin, KO Sung Won
• Format: Patent
• Language: English
• Published: 08.12.2016
• Subjects: BASIC ELECTRIC ELEMENTS; BLASTING; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF; HEATING; INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21Sand F21V, RELATING TO THEFORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THELIGHT EMITTED; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATINGELEMENTS; LIGHTING; MECHANICAL ENGINEERING; NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; NON-LINEAR OPTICS; NON-PORTABLE LIGHTING DEVICES; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR; SYSTEMS THEREOF; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLEEXTERIORS; WEAPONS

Provided is a semiconductor light emitting device including: a light emitting stack including a first semiconductor layer, an active layer and a second semiconductor layer; a first electrode structure penetrating through the second semiconductor layer and the active layer to be connected to the first semiconductor layer, the first electrode structure having at least one contact region; and a second electrode structure connected to the second semiconductor layer, wherein the first semiconductor layer includes a protrusion portion provided on the at least one contact region and a recess portion provided in a circumferential portion of the protrusion portion.