SILICON GERMANIUM-ON-INSULATOR FORMATION BY THERMAL MIXING

A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent forma...

Full description

Saved in:
Bibliographic Details
Main Authors Sadana Devendra K, Kim Jeehwan, Bedell Stephen W, De Souza Joel P
Format Patent
LanguageEnglish
Published 08.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material.
Bibliography:Application Number: US201615237260