RGB-IR PHOTOSENSOR WITH NONUNIFORM BURIED P-WELL DEPTH PROFILE FOR REDUCED CROSS TALK AND ENHANCED INFRARED SENSITIVITY

A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type regio...

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Bibliographic Details
Main Authors Chen Gang, Mao Duli, Fu Zhenhong, Yang Dajiang, Hu Sing-Chung, Yi Xianmin
Format Patent
LanguageEnglish
Published 08.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.
Bibliography:Application Number: US201514731707