SILICON GERMANIUM-ON-INSULATOR FORMATION BY THERMAL MIXING
A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent forma...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
08.12.2016
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Subjects | |
Online Access | Get full text |
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Summary: | A layer of amorphous silicon is formed on a germanium-on-insulator substrate, or a layer of germanium is formed on a silicon-on-insulator substrate. An anneal is then performed which causes thermal mixing of silicon and germanium atoms within one of the aforementioned structures and subsequent formation of a silicon germanium-on-insulator material. |
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Bibliography: | Application Number: US201615237235 |