LOCAL SOI FINS WITH MULTIPLE HEIGHTS

A semiconductor structure is provided that contains silicon fins having different heights, while maintaining a reasonable fin height to width ratio for process feasibility. The semiconductor structure includes a first silicon fin of a first height and located on a pedestal portion of a first oxide s...

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Bibliographic Details
Main Authors Reznicek Alexander, de Souza Joel P, Cheng Kangguo, Khakifirooz Ali, Schepis Dominic J
Format Patent
LanguageEnglish
Published 17.11.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure is provided that contains silicon fins having different heights, while maintaining a reasonable fin height to width ratio for process feasibility. The semiconductor structure includes a first silicon fin of a first height and located on a pedestal portion of a first oxide structure. The structure further includes a second silicon fin of a second height and located on a pedestal portion of a second oxide structure. The first oxide structure and the second oxide structure are interconnected and the second oxide structure has a bottommost surface that is located beneath a bottommost surface of the first oxide structure. Further, the second height of the second silicon fin is greater than the first height of the first silicon fin, yet a topmost surface of the first silicon fin is coplanar with a topmost surface of the second silicon fin.
Bibliography:Application Number: US201514712516