Method of Lithography Process with Inserting Scattering Bars

The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout including a first main feature and inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature. The...

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Bibliographic Details
Main Authors Ho Irene, Chang Ya Hui, Hsieh Hung-Chang, Hung Ai-Jen, Lu Kuei-Liang
Format Patent
LanguageEnglish
Published 17.11.2016
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Summary:The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout including a first main feature and inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature. The first main feature is positioned at a center portion of the first circular pattern of scattering bars.
Bibliography:Application Number: US201514713360