Semiconductor Device Having Strained Channel Layer and Method of Manufacturing the Same

Semiconductor devices are provided. The semiconductor devices include active fins including a buffer layer disposed on a substrate and a channel layer disposed on the buffer layer and having a first second lattice constant higher than a lattice constant of the buffer layer, a gate structure covering...

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Bibliographic Details
Main Authors CHOI Hwan Wook, HEO Yeon Cheol, LEE Jae Hwan, LEE Jung Han, KWON Tae Yong, KIM Sang Su, HONG Sang Hyuk, YANG Chang Jae
Format Patent
LanguageEnglish
Published 10.11.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor devices are provided. The semiconductor devices include active fins including a buffer layer disposed on a substrate and a channel layer disposed on the buffer layer and having a first second lattice constant higher than a lattice constant of the buffer layer, a gate structure covering the channel layer and intersecting the active fins, sidewall spacers disposed on both sidewalls of the gate structure, and capping layers disposed to contact lower surfaces of the sidewall spacers and having a width substantially the same as a width of the lower surfaces of the sidewall spacers.
Bibliography:Application Number: US201614992683