LOW RESISTANCE CONTACT FOR SEMICONDUCTOR DEVICES

A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type material is formed on or in the p-doped layer. The n-type layer includes ZnO. An aluminum contact is formed in direct contact with the ZnO of the n-type material to form an el...

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Bibliographic Details
Main Authors Sadana Devendra K, de Souza Joel P, Kim Jeehwan, Wacaser Brent A, Fogel Keith E
Format Patent
LanguageEnglish
Published 13.10.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type material is formed on or in the p-doped layer. The n-type layer includes ZnO. An aluminum contact is formed in direct contact with the ZnO of the n-type material to form an electronic device.
Bibliography:Application Number: US201615183336