Composite Semiconductor Device with Different Channel Widths

• Main Authors: Min Won Gi, Zuo Jiang-Kai, Yang Hongning, Rodriquez Pete
• Format: Patent
• Language: English
• Published: 29.09.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures has a lower resistance in a saturation region of operation than each transistor structure of the second plurality of transistor structures.