METHODS OF FORMING WIRING STRUCTURES IN A SEMICONDUCTOR DEVICE

Methods of forming wiring structures and methods of manufacturing semiconductor devices include forming a lower structure on a substrate, forming an interlayer insulating film including an opening on the lower structure, forming a liner film on an inner surface of the opening, treating a surface of...

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Main Authors Lee Nae-In, Kim Jin-Nam, Cha Jeong-Ok, Hwang Jung-Ha, Lee Jong-Jin, Kim Rak-Hwan, Kim Byung-Hee, Matsuda Tsukasa
Format Patent
LanguageEnglish
Published 22.09.2016
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Summary:Methods of forming wiring structures and methods of manufacturing semiconductor devices include forming a lower structure on a substrate, forming an interlayer insulating film including an opening on the lower structure, forming a liner film on an inner surface of the opening, treating a surface of the liner film by an ion bombardment, and forming a first conductive film on the liner film. The first conductive film is formed to be at least partially filled in the opening through a reflow process. Related wiring structures and semiconductor devices are also discussed.
Bibliography:Application Number: US201615018484