LOW-COST SOI FINFET TECHNOLOGY

A method of forming an SOI fin using a porous semiconductor. The method may include forming a stack of semiconductor layers on a substrate, the stack includes a second semiconductor layer on a first semiconductor layer in a layered region; forming fins in the second semiconductor layer by etching a...

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Bibliographic Details
Main Authors Reznicek Alexander, Sadana Devendra K, de Souza Joel P, Bedell Stephen W, Schepis Dominic J
Format Patent
LanguageEnglish
Published 22.09.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming an SOI fin using a porous semiconductor. The method may include forming a stack of semiconductor layers on a substrate, the stack includes a second semiconductor layer on a first semiconductor layer in a layered region; forming fins in the second semiconductor layer by etching a trench through an exposed portion of the of the second semiconductor layer; converting the first semiconductor layer into a porous semiconductor layer using a porousification process; and converting the porous semiconductor layer into an oxide layer.
Bibliography:Application Number: US201514658269