MEASURING ARRANGEMENT FOR MEASURING OPTICAL PROPERTIES OF A REFLECTIVE OPTICAL ELEMENT, IN PARTICULAR FOR MICROLITHOGRAPHY

A measuring arrangement for measuring optical properties of a reflective optical element, in particular for microlithography, with an EUV light source (5), a detector (20) configured to detect EUV radiation reflected at the reflective optical element (10), and an imaging system (30, 40, 50, 60, 70,...

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Bibliographic Details
Main Authors BOL Johannes, ROSTALSKI Hans-Juergen
Format Patent
LanguageEnglish
Published 22.09.2016
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MATERIALS THEREFOR
MEASURING
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
TESTING
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Summary:A measuring arrangement for measuring optical properties of a reflective optical element, in particular for microlithography, with an EUV light source (5), a detector (20) configured to detect EUV radiation reflected at the reflective optical element (10), and an imaging system (30, 40, 50, 60, 70, 80, 90), which images object points on the reflective optical element onto respective image points on the detector, wherein the imaging system is configured to reflect the EUV radiation, a first optical component (31, 41, 51, 61, 71, 81, 91), and at least one second optical component (32, 42, 52, 62, 72, 82, 92). Both at the first optical component and at the second optical component, reflection angles with respect to respective surface normals that respectively occur during reflection of the EUV radiation are at least 70°.
Bibliography:Application Number: US201615169050