QUANTUM DOTS WITH MULTIPLE INSULATOR COATINGS

Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the na...

Full description

Saved in:
Bibliographic Details
Main Authors Theobald Brian, Kurtin Juanita N, Zhao Weiwen, Bertram Matthew, Puetz Norbert
Format Patent
LanguageEnglish
Published 15.09.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.
Bibliography:Application Number: US201615064491