METHOD FOR FORMING METAL OXIDE SEMICONDUCTOR DEVICE

The present invention provides a method of forming a metal oxide semiconductor (MOS) device comprising a gate structure and an epitaxial structure. The gate structure is disposed on a substrate. The epitaxial structure is disposed in the substrate at two sides of the gate structure and a part thereo...

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Bibliographic Details
Main Authors Tang Chun-Jung, Chen Tai-Ju, Lee Kung-Hong, Chen Te-Chih
Format Patent
LanguageEnglish
Published 04.08.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a method of forming a metal oxide semiconductor (MOS) device comprising a gate structure and an epitaxial structure. The gate structure is disposed on a substrate. The epitaxial structure is disposed in the substrate at two sides of the gate structure and a part thereof serves a source/drain of the MOS, wherein the epitaxial structure comprises: a first buffer layer with a second conductive type, a second buffer layer, and an epitaxial layer with a first conductive type complementary to the second conductive type. The present invention further provides a method of forming the same.
Bibliography:Application Number: US201615092623