SEMICONDUCTOR MEMORY DEVICE

According to one embodiment, a semiconductor memory device includes: a semiconductor substrate; a first semiconductor pillar above the semiconductor substrate; a first insulating layer comprising a first section and a second section, the first section being in contact with the semiconductor substrat...

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Bibliographic Details
Main Authors Sato Atsuhiro, Maeda Hiroyuki, Minami Toshifumi, Kamata Hideyuki, SHINOHARA Hiroshi, Baba Yasuyuki, Saito Shinji, Yonehama Keisuke
Format Patent
LanguageEnglish
Published 28.07.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, a semiconductor memory device includes: a semiconductor substrate; a first semiconductor pillar above the semiconductor substrate; a first insulating layer comprising a first section and a second section, the first section being in contact with the semiconductor substrate and a bottom of the first semiconductor pillar, and the second section covering a side of the first semiconductor pillar; conductive layers and second insulating layers stacked one by one above the semiconductor substrate and covering the second section of the first insulating layer; a first plug on the first semiconductor pillar; and an interconnect on the first plug.
Bibliography:Application Number: US201615092774