GLASS FRIT WAFER BOND PROTECTIVE STRUCTURE

A bonded semiconductor device comprising a support substrate, a semiconductor device located with respect to one side of the support substrate, a cap substrate overlying the support substrate and the device, a glass frit bond ring between the support substrate and the cap substrate, an electrically...

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Bibliographic Details
Main Authors MONTEZ RUBEN B, STEIMLE ROBERT F
Format Patent
LanguageEnglish
Published 28.07.2016
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Summary:A bonded semiconductor device comprising a support substrate, a semiconductor device located with respect to one side of the support substrate, a cap substrate overlying the support substrate and the device, a glass frit bond ring between the support substrate and the cap substrate, an electrically conductive ring between the support substrate and the cap substrate. The electrically conductive ring forms an inner ring around the semiconductor device and the glass frit bond ring forms an outer bond ring around the semiconductor device.
Bibliography:Application Number: US201314104658