SEMICONDUCTOR STRUCTURE COMPRISING AN ALUMINUM GATE ELECTRODE PORTION AND METHOD FOR THE FORMATION THEREOF

An illustrative method includes providing a semiconductor structure. The semiconductor structure includes an active region and an electrically insulating structure. The active region includes a source region, a channel region and a drain region. The electrically insulating structure includes a reces...

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Bibliographic Details
Main Authors BINDER ROBERT, METZGER JOACHIM, GRASS CARSTEN
Format Patent
LanguageEnglish
Published 14.07.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An illustrative method includes providing a semiconductor structure. The semiconductor structure includes an active region and an electrically insulating structure. The active region includes a source region, a channel region and a drain region. The electrically insulating structure includes a recess over the channel region. A work function adjustment layer is deposited over the semiconductor structure. A portion of the work function adjustment layer is deposited at a bottom surface of the recess. The work function adjustment layer includes at least one material other than titanium nitride. A titanium nitride pre-wetting layer is deposited over the work function adjustment layer. A titanium wetting layer is deposited directly on the titanium nitride pre-wetting layer. After the deposition of the titanium wetting layer, the recess is filled with aluminum.
Bibliography:Application Number: US201514722295