Device and Method for Stopping an Etching Process

A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etch...

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Bibliographic Details
Main Authors DICKENSCHEID WOLFGANG, MEINHOLD DIRK, HARTENBERGER MICHAEL, SEIDEMANN GEORG, BRENCHER LOTHAR
Format Patent
LanguageEnglish
Published 07.07.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etchant includes a first etch selectivity of at least 5:1 with respect to the etch layer and the intermediate layer. The second etchant includes a second etch selectivity of at least 5:1 with respect to the intermediate layer and the stop layer. The first etchant being is different from the second etchant.
Bibliography:Application Number: US201615052676